MCH3475 |
Part Number | MCH3475 |
Manufacturer | Sanyo Semicon Device |
Description | Ordering number : ENA1000 MCH3475 SANYO Semiconductors DATA SHEET MCH3475 Features • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Ultrahigh-speed switching. 4V drive... |
Features |
• • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm) Conditions Ratings 30 ±20 1.8 7.2 0.8 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Ga... |
Document |
MCH3475 Data Sheet
PDF 77.38KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | MCH3474 |
Sanyo Semicon Device |
General-Purpose Switching Device Applications | |
2 | MCH3474 |
ON Semiconductor |
Power MOSFET | |
3 | MCH3475 |
ON Semiconductor |
Power MOSFET | |
4 | MCH3476 |
ON Semiconductor |
Power MOSFET | |
5 | MCH3477 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET General-Purpose Switching Device Applications | |
6 | MCH3477 |
ON Semiconductor |
Power MOSFET |