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IPA180N10N3G |
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| Part Number | IPA180N10N3G |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | IPA180N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID • ... |
| Features |
• N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification Type IPA180N10N3 G 100 V 18 mW 28 A Package Marking PG-TO220-FP 180N10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25 °C2) T C=100 °C Pulsed drain current2) I D,pulse T C... |
| Document |
 IPA180N10N3G Data Sheet
PDF 333.79KB |
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Desde 2024. D4U Semiconductor.
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