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NSM21356DW6T1G |
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| Part Number | NSM21356DW6T1G |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | NSM21356DW6T1G Dual Complementary Transistors General Purpose PNP Transistor and NPN Transistors with Monolithic Bias Network NSM21356DW6T1G contains a single PNP transistor and a monolithic bias netw... |
| Features |
(3)
http://onsemi.com
(2)
(1)
Q1 Q2 R2 (4) R1 (5) (6)
•ăSimplifies Circuit Design •ăReduces Board Space •ăReduces Component Count •ăQ1: NPN BRT, R1 = R2 = 47 k •ăQ2: PNP •ăThis is a Pb-Free Device Applications 6 1 SC-88/SOT-363 CASE 419B STYLE 1 •ăLogic Switching •ăAmplification •ăDriver Circuits •ăInterface Circuits MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating - Q1 (NPN BRT) Collector‐Base Voltage Collector‐Emitter Voltage Collector Current Rating - Q2 (PNP) Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Symbol V... |
| Document |
 NSM21356DW6T1G Data Sheet
PDF 96.48KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NSM21156DW6T1G |
ON Semiconductor |
Dual Complementary Transistors |
|
| 2 | NSM2012 |
NOVOSENSE |
Hall-Effect-Based Current Sensor IC |
|
| 3 | NSM2015 |
NOVOSENSE |
Hall-Effect-Based Current Sensor IC |
|
| 4 | NSM2016 |
NOVOSENSE |
Hall-Effect-Based Current Sensor IC |
|
| 5 | NSM2416 |
National Semiconductor |
Alphanumeric Display |
|
| 6 | NSM-1416 |
National Semiconductor |
Display |
|
Desde 2024. D4U Semiconductor.
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