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IPB038N12N3G |
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| Part Number | IPB038N12N3G |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
| Description | IPP041N12N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO-26... |
| Features |
• N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO-263) ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant, halogen free • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification IPI041N12N3 G IPB038N12N3 G 120 V 3.8 mW 120 A Type IPB038N12N3 G IPI041N12N3 G IPP041N12N3 G Package Marking PG-TO263-3 038N12N PG-TO262-3 041N12N PG-TO220-3 041N12N Maximum ratings, at T j=25 °C, unless otherwise specified P... |
| Document |
 IPB038N12N3G Data Sheet
PDF 873.00KB |
Similar Datasheet
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| 1 | IPB038N12N3 |
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| 2 | IPB038N12N3G |
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Desde 2024. D4U Semiconductor.
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