NTD5865N |
Part Number | NTD5865N |
Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
Description | NTD5865N N-Channel Power MOSFET 60 V, 43 A, 18 mW Features • Low Gate Charge • Fast Switching • High Current Capability • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free and are RoHS... |
Features |
• Low Gate Charge • Fast Switching • High Current Capability • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Gate−to−Source Voltage − Non−Repetitive (tp < 10 ms) Continuous Drain Current (RqJC) Power Dissipation (RqJC) Steady State TC = 25°C TC = 100°C TC = 25°C Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature VDSS VGS VGS ID PD IDM TJ, Tstg 60 ±20 ±30 43 31 71 192 −55 to 175 ... |
Document |
NTD5865N Data Sheet
PDF 92.68KB |
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