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STP3N150 |
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| Part Number | STP3N150 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | These Power MOSFETs are designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves on the performance of comparable st... |
| Features |
Order codes
VDS
RDS(on) max.
ID
PTOT
STFW3N150
63 W
STH3N150-2
1500 V
9Ω
STP3N150
2.5 A
140 W
STW3N150
• 100% avalanche tested • Intrinsic capacitances and Qg minimized • High speed switching • Fully isolated TO-3PF plastic package, creepage distance path is 5.4 mm (typ.) Applications • Switching applications S(3) (TO-3PF, TO-220 and TO-247) S(2, 3) (H2PAK-2) AM15557v1 Description These Power MOSFETs are designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves on the performance of comparable... |
| Document |
 STP3N150 Data Sheet
PDF 672.53KB |
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Desde 2024. D4U Semiconductor.
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