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STB8NC50-1 |
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| Part Number | STB8NC50-1 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge ... |
| Features |
= 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature –65 to 150 150 (1)ISD ≤8A, di/dt ≤100A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX. Value STP(B)8NC50(-1) STP8NC50FP 500 500 ±30 8 5.4 32 135 1.075 3 2000 8(*) 5.4(*) 32(*) 40 0.32 Unit V V V A A A W W/°C V/ns V °C °C ( •)Pulse width limited by safe operating area (*) Limited only by maximum temperature a... |
| Document |
 STB8NC50-1 Data Sheet
PDF 257.32KB |
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