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STB8NA50 |
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| Part Number | STB8NA50 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | STB8NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STB8NA50 n n n n n n n n V DSS 500 V R DS(on ) < 0.85 Ω ID 8 A n TYPICAL RDS(on) = 0.7 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 1... |
| Features |
T c = 100 o C Drain Current (pulsed) T otal Dissipation at T c = 25 C Derating Fact or Storage Temperature Max. O perating Junction Temperature
o o
Valu e 500 500 ± 30 8 5.3 32 125 1 -65 to 150 150
Unit V V V A A A W W/ oC
o o
C C
( •) Pulse width limited by safe operating area October 1995 1/10 www.DataSheet.in STB8NA50 THERMAL DATA R thj -ca se R thj- amb R thc-sin k Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead T emperature For Soldering Purpose Max Max Typ 1 62.5 0.5 300 o o C/W C/W o C/W o C AVALANCHE CHARACTERI... |
| Document |
 STB8NA50 Data Sheet
PDF 147.92KB |
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