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BLF871 |
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| Part Number | BLF871 |
| Manufacturer | NXP (https://www.nxp.com/) Semiconductors |
| Description | A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The excellent ruggedness and broadban... |
| Features |
2-tone performance at 860 MHz, a drain-source voltage VDS of 40 V and a quiescent drain current IDq = 0.5 A: Peak envelope power load power = 100 W Power gain = 21 dB Drain efficiency = 47 % Third order intermodulation distortion = −35 dBc
DVB performance at 858 MHz, a drain-source voltage VDS of 40 V and a quiescent drain current IDq = 0.5 A: Average output power = 24 W Power gain = 22 dB Drain efficiency = 33 % Third order intermodulation distortion = −34 dBc (4.3 MHz from center frequency)
NXP Semiconductors
BLF871; BLF871S
UHF power LDMOS transistor
Integrated ESD ... |
| Document |
 BLF871 Data Sheet
PDF 203.23KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BLF871 |
Ampleon |
Power LDMOS transistor |
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| 2 | BLF871S |
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Power LDMOS transistor |
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| 3 | BLF871S |
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UHF power LDMOS transistor |
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| 4 | BLF872 |
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UHF power LDMOS transistor |
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| 5 | BLF878 |
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| 6 | BLF879P |
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Desde 2024. D4U Semiconductor.
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