WFF10N65 |
Part Number | WFF10N65 |
Manufacturer | WINSEMI SEMICONDUCTOR |
Description | This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche... |
Features |
� � � � � � 10A,650V,RDS(on)(Max 1Ω)@VGS=10V Ultra-low Gate Charge(Typical 43nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(VISO=4000V AC) Improved dv/dt capability
General Description
This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for AC-DC switching power supplies,DC-DC power converters,high voltage h-bridge motor drive PWM.
Absolute Maximum Ratings
Symbol
VDSS I... |
Document |
WFF10N65 Data Sheet
PDF 912.26KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | WFF10N60 |
Wisdom technologies |
N-Channel MOSFET | |
2 | WFF10N60 |
WINSEMI SEMICONDUCTOR |
Silicon N-Channel MOSFET | |
3 | WFF10N65L |
Winsemi |
Silicon N-Channel MOSFET | |
4 | WFF1101 |
BOSCH |
(WFF1xx1) GB Directions for Use | |
5 | WFF1121 |
BOSCH |
(WFF1xx1) GB Directions for Use | |
6 | WFF1201 |
BOSCH |
(WFF1xx1) GB Directions for Use |