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WFF13N50 |
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| Part Number | WFF13N50 |
| Manufacturer | WINSEMI SEMICONDUCTOR |
| Description | This Power MOSFET is produced using Winsemi's advancedplanar stripe,DMOS technology.This latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche cha... |
| Features |
� � � � � 13A,500V, RDS(on)(Max0.46Ω)@VGS=10V Ultra-low Gate charge(Typical 43nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advancedplanar stripe,DMOS technology.This latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast.
Ab... |
| Document |
 WFF13N50 Data Sheet
PDF 215.54KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | WFF1301 |
BOSCH |
(WFF1xx1) GB Directions for Use |
|
| 2 | WFF10N60 |
Wisdom technologies |
N-Channel MOSFET |
|
| 3 | WFF10N60 |
WINSEMI SEMICONDUCTOR |
Silicon N-Channel MOSFET |
|
| 4 | WFF10N65 |
WINSEMI SEMICONDUCTOR |
Silicon N-Channel MOSFET |
|
| 5 | WFF10N65L |
Winsemi |
Silicon N-Channel MOSFET |
|
| 6 | WFF1101 |
BOSCH |
(WFF1xx1) GB Directions for Use |
|
Desde 2024. D4U Semiconductor.
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