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IRG4PC50SDPBF |
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| Part Number | IRG4PC50SDPBF |
| Manufacturer | International Rectifier |
| Description | PD - 97316 IRG4PC50SDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Standard: Optimized for minimum saturation voltage and low operating frequencies (<1kHz) IGBT co-pack... |
| Features |
C
VCES = 600V
G E
VCE(on) typ. = 1.28V
@VGE = 15V, IC = 41A
Benefits
n-channel
Generation -4 IGBT's offer highest efficiencies available IGBT's optimized for specific application conditions HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing
C
E C G TO-247AC
G Gate
C Collector
E Emitter
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector ... |
| Document |
 IRG4PC50SDPBF Data Sheet
PDF 404.22KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRG4PC50S |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 2 | IRG4PC50SPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 3 | IRG4PC50F |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 4 | IRG4PC50F-EPBF |
International Rectifier |
Fast Speed IGBT |
|
| 5 | IRG4PC50FD |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 6 | IRG4PC50FDPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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