Busque con el número de pieza junto con el fabricante o la descripción
FTD2017M |
Click to view a larger image
| Part Number | FTD2017M |
| Manufacturer | Sanyo Semicon Device |
| Description | Ordering number : ENA1176 FTD2017M SANYO Semiconductors DATA SHEET FTD2017M Features • • • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. 2.5V dri... |
| Features |
• • • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. 2.5V drive. Mount height 1.1mm. Composite type, facilitating high-density mounting. Drain common specifications. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1000mm 2✕0.8mm) 1unit When mounted on ceramic subst... |
| Document |
 FTD2017M Data Sheet
PDF 72.08KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FTD2017 |
Sanyo Semicon Device |
Load Switching Applications |
|
| 2 | FTD2011 |
Sanyo Semicon Device |
Load Switching Applications |
|
| 3 | FTD2011A |
Sanyo Semicon Device |
N CHANNEL MOS SILICON TRANSISTOR |
|
| 4 | FTD2012 |
Sanyo Semicon Device |
N- Channel Silicon MOS FET Load S/W USE |
|
| 5 | FTD2013 |
Sanyo Semicon Device |
Load Switching Applications |
|
| 6 | FTD2014 |
Sanyo Semicon Device |
Load Switching Applications |
|
Desde 2024. D4U Semiconductor.
|