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IRLR014N |
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| Part Number | IRLR014N |
| Manufacturer | International Rectifier |
| Description | Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switchi... |
| Features |
D @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
10 7.1 40 28 0.2 ± 16 35 6.0 2.8 5.0 -55 to + 175 300 (1.6mm from case )
Units
A W W/°C V mJ A mJ V/ns °C
Thermal Resistance
Parameter
RθJC RθJA RθJA Junction-to-Case Case-to-Ambient ... |
| Document |
 IRLR014N Data Sheet
PDF 135.38KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | IRLR014 |
International Rectifier |
HEXFET POWER MOSFET |
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| 2 | IRLR014 |
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| 3 | IRLR014A |
INCHANGE |
N-Channel MOSFET |
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| 4 | IRLR014NPBF |
International Rectifier |
HEXFET POWER MOSFET |
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| 5 | IRLR014PBF |
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| 6 | IRLR014PBF |
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Desde 2024. D4U Semiconductor.
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