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LP721 |
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| Part Number | LP721 |
| Manufacturer | Polyfet RF Devices |
| Description | Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver an... |
| Features |
low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency.
TM
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 20.0 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total Device Dissipation 80 Watts Junction to Case Thermal Resistance o 1.80 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 50 V Drain to Source Voltage 50 V Gate to Source Voltage 20 V
8.0 A
RF CHARACTERISTICS (
SYMBOL G... |
| Document |
 LP721 Data Sheet
PDF 35.67KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | LP722 |
Polyfet RF Devices |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR |
|
| 2 | LP701 |
Polyfet RF Devices |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR |
|
| 3 | LP702 |
Polyfet RF Devices |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR |
|
| 4 | LP7100B |
Silvan Chip |
Tone siren |
|
| 5 | LP750 |
Filtronic Compound Semiconductors |
0.5 W POWER PHEMT |
|
| 6 | LP750P100 |
Filtronic Compound Semiconductors |
PACKAGED 0.5 WATT POWER PHEMT |
|
Desde 2024. D4U Semiconductor.
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