2SC4368 Inchange Semiconductor Silicon NPN Power Transistor Datasheet. existencias, precio

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2SC4368

Inchange Semiconductor
2SC4368
2SC4368 2SC4368
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Part Number 2SC4368
Manufacturer Inchange Semiconductor
Description ·Collector-Emitter Breakdown Voltage : VCEO= 150V(Min) ·Complement to Type 2SA1657 ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATI...
Features T V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 150 V VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA ICBO Collector Cutoff Current VCB= 120V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.5 V 10 μA 10 μA hFE DC Current Gain IC= 500mA; VCE= 10V 40 140 COB Collector Output Capacitance IE= 0; VCB= 10V; f= 1.0MHz 35 pF fT Current-Gain—Bandwidth Product IC= 500m A; VCE= 10V 4 MHz NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is...

Document Datasheet 2SC4368 Data Sheet
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