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MS1227 |
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| Part Number | MS1227 |
| Manufacturer | Advanced Power Technology |
| Description | The MS1227 is a 12.5V epitaxial NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ABSOLUTE MAXIMUM RAT... |
| Features |
• • • • • • 30 MHz 12.5 VOLTS GOLD METALIZATION POUT = 20 W MINIMUM GP = 15 dB COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1227 is a 12.5V epitaxial NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC PDISS TJ T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value 36 18 4.0 4.5 80 +200 -65 to +150 Unit V V V A W °C °C Thermal Data RT... |
| Document |
 MS1227 Data Sheet
PDF 132.10KB |
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Desde 2024. D4U Semiconductor.
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