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MS1226 |
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| Part Number | MS1226 |
| Manufacturer | Microsemi (https://www.microsemi.com/) |
| Description | The MS1226 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ABSOLUTE MAXIM... |
| Features |
• • • • • • 30 MHz 28 VOLTS IMD = -28 dB POUT = 30 WATTS GP = 18 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1226 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC PDISS TJ T STG Parameter Collector-base Voltage Collector-emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value 65 36 4.0 4.5 80 +200 -65 to +150 Unit V V V A W °C °C Thermal Data... |
| Document |
 MS1226 Data Sheet
PDF 87.31KB |
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Desde 2024. D4U Semiconductor.
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