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MS1226 |
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| Part Number | MS1226 |
| Manufacturer | Advanced Power Technology |
| Description | The MS1226 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ABSOLUTE MAXI... |
| Features |
30 MHz 28 VOLTS IMD = -28 dB POUT = 30 WATTS GP = 18 dB MINIMUM COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1226 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO VCEO VEBO IC PDISS TJ TSTG Co llector-base Voltage Co llector-emitter Voltage Emit ter-Base Voltage Dev ice Current Po wer Dissipation Ju nction Temperature Storage Temperature
Paramete
r
65 36 4.0 4.5 80 +200 -65 to +150
Value
U
V V V A W C C
nit
Thermal Therma... |
| Document |
 MS1226 Data Sheet
PDF 429.16KB |
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Desde 2024. D4U Semiconductor.
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