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10EDB10 |
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| Part Number | 10EDB10 |
| Manufacturer | Nihon Inter Electronics |
| Description | www.DataSheet4U.com DIODE FEATURES Type : 10EDB10 1A 100V Tj =150 °C OUTLINE DRAWING * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and ... |
| Features |
Type :
10EDB10
1A 100V Tj =150 °C
OUTLINE DRAWING
* Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package Available
Maximum Ratings
Rating
Repetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Symbol VRRM IO IF(RMS) IFSM Tjw Tstg
Approx Net Weight:0.17g 10EDB10 100 50Hz Half Sine Wave Resistive Load Ta=39°C *1 Ta=26°C *2 1.0 0.9 1.57 50Hz Half Sine Wave,1cycle, Non-repetitive - 40 to + 150... |
| Document |
 10EDB10 Data Sheet
PDF 62.33KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 10EDB10 |
SUNMATE |
AXIAL LEADED SILICON RECTIFIER DIODES |
|
| 2 | 10EDB20 |
Nihon Inter Electronics |
DIODE |
|
| 3 | 10EDB40 |
Nihon Inter Electronics |
DIODE |
|
| 4 | 10EDB60 |
Nihon Inter Electronics |
DIODE |
|
| 5 | 10EDB60 |
Gulf Semiconductor |
GLASS PASSIVATED RECTIFIER |
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| 6 | 10EDB60 |
SUNMATE |
AXIAL LEADED SILICON RECTIFIER DIODES |
|
Desde 2024. D4U Semiconductor.
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