RJK5030DPD |
Part Number | RJK5030DPD |
Manufacturer | Renesas (https://www.renesas.com/) Technology |
Description | of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for th... |
Features |
Low on-state resistance RDS(on) = 1.3 typ. (at ID = 2 A, VGS = 10 V, Ta = 25C) High speed switching REJ03G1913-0100 Rev.1.00 Apr 12, 2010 Outline RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A) 4 1. 2. 3. 4. Gate Drain Source Drain D G 12 3 S Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Avalanche current Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1. Pulse width limited by safe operating area. 2. Value at Tc = 25C 3. STch = 25C, Tch 15... |
Document |
RJK5030DPD Data Sheet
PDF 94.44KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | RJK5030DPP-M0 |
Renesas |
High Speed Power Switching | |
2 | RJK5031DPD |
Renesas |
N-Channel Power MOSFET | |
3 | RJK5032DPD |
Renesas |
MOS FET | |
4 | RJK5032DPH-E0 |
Renesas |
High Speed Power Switching | |
5 | RJK5033DPD |
Renesas |
N-Channel Power MOSFET | |
6 | RJK5033DPP-M0 |
Renesas |
High Speed Power Switching |