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A2S56D20CTP |
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| Part Number | A2S56D20CTP |
| Manufacturer | Powerchip Semiconductor |
| Description | A2S56D20CTP is a 4-bank x 16,777,216-word x 4-bit, A2S56D30CTP is a 4-bank x 8,388,608-word x 8bit, A2S56D40CTP is a 4-bank x 4,194,304-word x 16bit double data rate synchronous DRAM , with SSTL_2 in... |
| Features |
- Vdd=Vddq=2.5V ± 0.2V power supply for -6,-75. -Vdd=Vddq=2.6V ± 0.1V power supply for -5. - Double data rate architecture ; two data transfers per clock cycle. - Bidirectional , data strob (DQS) is transmitted/received with data - Differential clock input (CLK and /CLK) - DLL aligns DQ and DQS transitions with CLK transitions edges of DQS - Commands entered on each positive CLK edge ; - Data and data mask referenced to both edges of DQS - 4 bank operation controlled by BA0 , BA1 (Bank Address) - /CAS latency - 2.0 / 2.5/ 3 (programmable) ; Burst length - 2 / 4 / 8 (programmable) Burst type - ... |
| Document |
 A2S56D20CTP Data Sheet
PDF 620.59KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | A2S56D30CTP |
Powerchip Semiconductor |
256Mb DDR SDRAM |
|
| 2 | A2S56D40CTP |
Powerchip Semiconductor |
256Mb DDR SDRAM |
|
| 3 | A2SHB |
SLS SEMICONDUCTOR |
N-Channel MOSFET |
|
| 4 | A2SHB |
Low Power Semi |
N-Channel MOSFET |
|
| 5 | A2SHB |
HAOHAI |
N-Channel MOSFET |
|
| 6 | A2SHB |
YUSHIN |
SOT-23 FET |
|
Desde 2024. D4U Semiconductor.
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