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TJ120F06J3 |
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| Part Number | TJ120F06J3 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TJ120F06J3 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ) TJ120F06J3 • • • • Low drain-source ON resistance: RDS (ON) = 5.5 mΩ (typ.) High forward transfer ad... |
| Features |
ngle pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature (Note 4) Storage temperature range (Note 4)
JEDEC JEITA TOSHIBA
⎯ ⎯ 2-10W1A
Weight: 1.07 g (typ.)
2
Thermal Characteristics
Characteristics Thermal resistance, channel to case Symbol Rth (ch-c) Max 0.5 Unit °C/W
1
3
Note 1: Please use devises on condition that the channel temperature is below 175°C. Note 2: VDD = −25 V, Tch = 25°C (Initial), L = 57 μH, RG = 25 Ω, IAR = −120 A Note 3: Repetitive rating; pulse width limited by maximum channel temperature. Note 4: The definitions... |
| Document |
 TJ120F06J3 Data Sheet
PDF 244.17KB |
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