SSM6K211FE |
Part Number | SSM6K211FE |
Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
Description | SSM6K211FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOSⅢ) SSM6K211FE ○ High-Speed Switching Applications ○ Power Management Switch Applications • 1.5-V drive • Low ON-resistanc... |
Features |
perating temperature/current/voltage, etc.) are within the absolute
Weight: 3 mg (typ.)
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
Marking
Equivalent Circuit (top view)
654
654
NQ
123
123
Start of commercial production
2008-10
1
2014-03-01
SSM6K211FE
Electrical Characterist... |
Document |
SSM6K211FE Data Sheet
PDF 241.78KB |
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