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SSM6K209FE |
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| Part Number | SSM6K209FE |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | SSM6K209FE www.DataSheet4U.com TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K209FE ○ High-Speed Switching Applications ○ Power Management Switch Applications • • 4.0V drive Low ON-r... |
| Features |
tage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )
Note:
ES6
JEDEC JEITA TOSHIBA
4
― ―
2-2N1A
Weight: 3.0 mg (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic Drain –source breakdown voltage Drain cutoff current Gate leakage current Gate threshol... |
| Document |
 SSM6K209FE Data Sheet
PDF 212.68KB |
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