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2SK4026 |
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| Part Number | 2SK4026 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | www.DataSheet4U.com 2SK4026 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS V) 2SK4026 Switching Regulator Applications ６．５±０．２ ５．２±０．２ １．５±０．２ Unit: mm ０．６ MAX． Features • • • ... |
| Features |
• • • • Low drain-source ON-resistance: RDS (ON) = 6.4 Ω(typ.) High forward transfer admittance: |Yfs| = 0.85 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDSS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) ０．９ １．６ ５．５±０．２ １．１±０．２ ４．１±０．２ ５．７ ０．６ MAX ２．３ ２．３ ２．３±０．２ ０．６±０．１５ ０．６±０．１５ Absolute Maximum Ratings (Ta = 25°C) １ ２ ３ Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 ±30 1 2 20 56 1 2 150 −55 to 150 ... |
| Document |
 2SK4026 Data Sheet
PDF 235.40KB |
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Desde 2024. D4U Semiconductor.
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