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BUK9MFF-65PSS |
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| Part Number | BUK9MFF-65PSS |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance (HPA) TrenchPLUS technology, featuring very low on-state resistance, integrated... |
| Features |
Integrated current sensors Integrated temperature sensors
1.3 Applications
Lamp switching Motor drive systems Power distribution Solenoid drivers
1.4 Quick reference data
Table 1. Symbol RDSon ID/Isense V(BR)DSS Quick reference data Parameter drain-source on-state resistance ratio of drain current to sense current drain-source breakdown voltage Conditions VGS = 5 V; ID = 10 A; Tj = 25 °C; see Figure 13; see Figure 16 Tj = 25 °C; VGS = 5 V; see Figure 17 ID = 250 µA; VGS = 0 V; Tj = 25 °C Min Typ 11.4 Max Unit 13.4 mΩ
FET1 and FET2 static characteristics
5831 6479 7127 A/A 65 V
... |
| Document |
 BUK9MFF-65PSS Data Sheet
PDF 267.25KB |
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