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BUK9C10-65BIT |
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| Part Number | BUK9C10-65BIT |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | N-channel enhancement mode field-effect power transistor in SOT427. Device is manufactured using NXP High-Performance TrenchPLUS technology, featuring very low on-state resistance, integrated current ... |
| Features |
AEC-Q101 compliant Low conduction losses due to low on-state resistance 1.3 Applications Lamp switching Motor drive systems Power distribution Solenoid drivers 1.4 Quick reference data Table 1. Symbol RDSon Quick reference data Parameter drain-source on-state resistance ratio of drain current to sense current drain-source breakdown voltage Conditions VGS = 5 V; ID = 25 A; Tj = 25 °C; see Figure 13; see Figure 12 Tj = 25 °C; VGS = 5 V; see Figure 14 ID = 250 µA; VGS = 0 V; Tj = 25 °C Min Typ 8.5 Max Unit 10 mΩ Static characteristics ID/Isense 8094 8993 9892 A/A V(BR)DSS 65 -... |
| Document |
 BUK9C10-65BIT Data Sheet
PDF 384.05KB |
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Desde 2024. D4U Semiconductor.
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