BUK9C07-65BIT |
Part Number | BUK9C07-65BIT |
Manufacturer | NXP (https://www.nxp.com/) |
Description | N-channel enhancement mode field-effect power transistor in SOT427. Device is manufactured using NXP High-Performance TrenchPLUS technology, featuring very low on-state resistance, integrated current ... |
Features |
AEC-Q101 compliant Low conduction losses due to low on-state resistance
1.3 Applications
Lamp switching Motor drive systems Power distribution Solenoid drivers
1.4 Quick reference data
Table 1. Symbol RDSon Quick reference data Parameter drain-source on-state resistance ratio of drain current to sense current drain-source breakdown voltage Conditions VGS = 5 V; ID = 25 A; Tj = 25 °C; see Figure 12; see Figure 13 Tj = 25 °C; VGS = 5 V; see Figure 14 ID = 250 µA; VGS = 0 V; Tj = 25 °C Min Typ 6 Max Unit 7 mΩ
Static characteristics
ID/Isense V(BR)DSS
1086 1206 1327 A/A 1 8 5 65 V... |
Document |
BUK9C07-65BIT Data Sheet
PDF 232.26KB |
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