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IXGH30N60C3C1 |
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| Part Number | IXGH30N60C3C1 |
| Manufacturer | IXYS |
| Description | Preliminary Technical Information GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 VCES IC110 VCE(sat) tfi(typ) = = ≤ = 600V 30A 3.0V 47ns High Speed PT IGB... |
| Features |
C = Collector TAB = Collector
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-220 & TO-247) TO-263 TO-220 TO-247
300 260 1.13/10 2.5 3.0 6.0
Optimized for Low Switching Losses Square RBSOA Anti-Parallel Schottky Diode International Standard Packages Advantages
Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) VGE(th) ICES IGES VCE(sat) IC = 250μA, VCE = VGE VCE = VCES, VGE = 0V TJ = 125°C VCE = 0V, VGE = ± 20V IC = 20A, VGE = 15V, Note 1 TJ = 125°C
Characteristic Values Min. Typ. Max. 3.5 5.5 25 V μA
High Power Density Low Gate Drive Requi... |
| Document |
 IXGH30N60C3C1 Data Sheet
PDF 308.12KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IXGH30N60C3 |
IXYS Corporation |
GenX3 600V IGBT |
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| 2 | IXGH30N60C2 |
IXYS |
HiPerFAST IGBT |
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| 3 | IXGH30N60C2D1 |
IXYS |
HiPerFAST IGBT |
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| 4 | IXGH30N60 |
IXYS Corporation |
Low VCE(sat) IGBT |
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| 5 | IXGH30N60A |
IXYS Corporation |
Low VCE(sat) IGBT |
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| 6 | IXGH30N60B |
IXYS Corporation |
HiPerFASTTM IGBT |
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Desde 2024. D4U Semiconductor.
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