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IXFH16N90 |
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| Part Number | IXFH16N90 |
| Manufacturer | IXYS |
| Description | www.DataSheet4U.com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data Symbol VDSS VDGR VGS VGSM I D25 IDM I AR EAR dv/dt PD TJ TJM Tstg TL Md We... |
| Features |
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International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier
Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 900 2.0 4.5 ±100 TJ = 25°C TJ = 125°C 25 250 0.65 V V nA µA µA Ω
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VDSS VGS(th) I GSS I DSS RDS(on)
VGS = 0 V, ID = 250µA VDS = VGS, ID = 5 mA VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS VGS = 0 V
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DC-DC converters Battery chargers Switched-... |
| Document |
 IXFH16N90 Data Sheet
PDF 214.63KB |
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