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IXFX120N30T |
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| Part Number | IXFX120N30T |
| Manufacturer | IXYS |
| Description | Advance Technical Information www.DataSheet4U.com GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK120N30T IXFX120N30T RDS(on) ≤ ≤ trr TO-264 (IXFK) VDSS... |
| Features |
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International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on)
Advantages
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Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 4mA VGS = ± 20V, VDS = 0V VDS = VDSS, VGS= 0V VGS = 10V, ID = 60A, Note 1 TJ = 125°C
Characteristic Values Min. Typ. Max. 300 2.5 5.0 ± 200 V V nA
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Easy to Mount Space Savings High Power Density
Applications
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50 µA 3 mA 24 mΩ
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DC-DC Converters Battery Chargers Switched-Mode and Resonant-Mode Power Supplies D... |
| Document |
 IXFX120N30T Data Sheet
PDF 163.07KB |
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