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IXFK66N50Q2 |
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| Part Number | IXFK66N50Q2 |
| Manufacturer | IXYS |
| Description | HiPerFET Power MOSFETs TM IXFK 66N50Q2 IXFX 66N50Q2 Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ... |
| Features |
z
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2.0 4.5 ± 200 TJ = 25°C TJ = 125°C 50 2 V V nA µA mA
z z
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 3mA VDS = VGS, ID = 8 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V
z z
Double metal process for low gate resistance International standard packages Epoxy meet UL 94 V-0, flammability classification Avalanche energy and current rated Fast intrinsic Rectifier
Advantages
z z z
VGS = 10 V, ID = 0.5 • ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 80 m Ω Easy to mount Space sav... |
| Document |
 IXFK66N50Q2 Data Sheet
PDF 601.85KB |
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Desde 2024. D4U Semiconductor.
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