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IXSH30N60B2D1 |
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| Part Number | IXSH30N60B2D1 |
| Manufacturer | IXYS |
| Description | www.DataSheet4U.com High Speed IGBT with Diode Short Circuit SOA Capability Preliminary Data Sheet IXSH 30N60B2D1 IXST 30N60B2D1 VCES = 600 V I C25 = 48 A V CE(sat) = 2.5 V Symbol VCES VCGR VGES V... |
| Features |
• International standard package • Guaranteed Short Circuit SOA capability • Low VCE(sat) - for low on-state conduction losses • High current handling capability • MOS Gate turn-on - drive simplicity • Fast fall time for switching speeds up to 20 kHz Applications • AC motor speed control • Uninterruptible power supplies (UPS) • Welding Advantages • High power density Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 4.0 7.0 150 1 ± 100 2.5 V µA mA nA V VGE(th) ICES IGES VCE(sat) IC = 750 µA, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE ... |
| Document |
 IXSH30N60B2D1 Data Sheet
PDF 637.05KB |
Similar Datasheet
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| 1 | IXSH30N60B |
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| 2 | IXSH30N60BD1 |
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| 3 | IXSH30N60 |
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| 4 | IXSH30N60A |
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| 5 | IXSH30N60C |
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| 6 | IXSH30N60CD1 |
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Desde 2024. D4U Semiconductor.
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