IXFR14N100Q2 |
Part Number | IXFR14N100Q2 |
Manufacturer | IXYS |
Description | Advanced Technical Data HiPerFET Power MOSFETs TM IXFR14N100Q2 Electrically Isolated Tab N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr Symbol VDSS VDGR VGS VGSM ID2... |
Features |
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Double metal process for low gate resistance Epoxy meet UL 94 V-0, flammability classification Low RDS (on), low Qg Avalanche energy and current rated Fast intrinsic rectifier
Applications
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20..120 / 4.6..27 N/lb 5 g
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DC-DC converters Switched-mode and resonant-mode power supplies, >500kHz switching DC choppers Pulse generation Laser drivers
Advantages Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 3.0 5.0 ±200 TJ = 25°C TJ = 125°C 25 1 0.90 V V nA µA mA Ω
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Easy to mount Space savings High power density
VDSS VGS... |
Document |
IXFR14N100Q2 Data Sheet
PDF 589.94KB |
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