BLF878 NXP Semiconductors transistor, Hoja de datos, Ficha técnica, Distribuidor, Inventario y Mejor Precio

BLF878

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Part Number	BLF878
Manufacturer	NXP (https://www.nxp.com/) Semiconductors
Description	A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 300 W broadband over the full UHF band from 470 MHz to 860 MHz. The exc...
Features	I 2-Tone performance at 860 MHz, a drain-source voltage VDS of 42 V and a quiescent drain current IDq = 1.4 A: N Peak envelope power load power = 300 W N Power gain = 21 dB N Drain efﬁciency = 46 % N Third order intermodulation distortion = −35 dBc I DVB performance at 858 MHz, a drain-source voltage VDS of 42 V and a quiescent drain current IDq = 1.4 A: N Average output power = 75 W N Power gain = 21 dB N Drain efﬁciency = 32 % N Third order intermodulation distortion = −32 dBc (4.3 MHz from center frequency) NXP Semiconductors BLF878 UHF power LDMOS transistor www.DataSheet4U.com I I I I...
Document	BLF878 Data Sheet PDF 182.68KB

No.	Parte #	Fabricante	Descripción
1	BLF871	Ampleon	Power LDMOS transistor
2	BLF871	NXP Semiconductors	UHF power LDMOS transistor
3	BLF871S	Ampleon	Power LDMOS transistor
4	BLF871S	NXP Semiconductors	UHF power LDMOS transistor
5	BLF872	NXP Semiconductors	UHF power LDMOS transistor
6	BLF879P	Ampleon	Power LDMOS transistor