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BLF6G38LS-100 |
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| Part Number | BLF6G38LS-100 |
| Manufacturer | NXP (https://www.nxp.com/) Semiconductors |
| Description | 100 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test ... |
| Features |
I Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.23 MHz) at a frequency of 3400 MHz, 3500 MHz and 3600 MHz, a supply voltage of 28 V and an IDq of 1050 mA: I Qualified up to a maximum VDS operation of 32 V I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation I Internally matched for ease of use I Low gold plating thickness on leads I Compliant to Directive 2002/95/E... |
| Document |
 BLF6G38LS-100 Data Sheet
PDF 122.74KB |
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