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IXFK69N30P |
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| Part Number | IXFK69N30P |
| Manufacturer | IXYS |
| Description | PolarHT HiPerFET Power MOSFET TM IXFH69N30P IXFK69N30P N-Channel Enhancement Mode Fast Intrinsic Diode RDS(on) trr VDSS ID25 = 300 V = 69 A = 49 mΩ ≤ 200 ns www.DataSheet4U.com Symbol VDSS VDGR... |
| Features |
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1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 TO-264
300
1.13/10 Nm/lb.in. 6 10 g g
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International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C
Characteristic Values Min. Typ. Max. 300 2.5 5.0 ±100 25 250 49 V V nA µA µA mΩ
Advantages
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Easy to mount Space savings High power densi... |
| Document |
 IXFK69N30P Data Sheet
PDF 627.44KB |
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Desde 2024. D4U Semiconductor.
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