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IXTQ120N15P |
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| Part Number | IXTQ120N15P |
| Manufacturer | IXYS |
| Description | PolarHTTM Power MOSFET IXTQ 120N15P IXTT 120N15P N-Channel Enhancement Mode Avalanche Rated V= DSS ID25 = ≤ RDS(on) 150 V 120 A 16 mΩ Symbol VDSS V DGR VDSS VGSM ID25 ID(RMS) I DM IAR EAR EAS dv/... |
| Features |
l International standard packages l Unclamped Inductive Switching (UIS)
rated l Low package inductance
- easy to drive and to protect
Advantages
l Easy to mount l Space savings l High power density
© 2005 IXYS All rights reserved
DS99280E(10/05)
Symbol
g fs
Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd R
thJC
RthCS
IXTQ 120N15P IXTT 120N15P
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified) Min. Typ. Max.
V = 10 V; I = 0.5 I , pulse test
40 60
S
DS
D
D25
VGS = 0 V, VDS = 25 V, f = 1 MHz
4900
pF
1300
pF
330
pF
VGS = 10 V, VDS = 0.5 VDSS, ID =... |
| Document |
 IXTQ120N15P Data Sheet
PDF 213.48KB |
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Desde 2024. D4U Semiconductor.
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