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PBSS302ND |
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| Part Number | PBSS302ND |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) SMD plastic package. PNP complement: PBSS302PD. 1.2 Features s s s s s Ultra low collector-emitter saturation voltage... |
| Features |
s s s s s Ultra low collector-emitter saturation voltage VCEsat 4 A continuous collector current capability IC (DC) Up to 15 A peak current Very low collector-emitter saturation resistance High efficiency due to less heat generation
1.3 Applications
s s s s s s Power management functions Charging circuits DC-to-DC conversion MOSFET gate driving Power switches (e.g. motors, fans) Thin Film Transistor (TFT) backlight inverter
1.4 Quick reference data
Table 1: Symbol VCEO IC ICM RCEsat
[1] [2]
Quick reference data Parameter collector-emitter voltage collector current (DC) peak collector current... |
| Document |
 PBSS302ND Data Sheet
PDF 124.58KB |
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