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PBSS2515E |
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| Part Number | PBSS2515E |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package. PNP complement: PBSS3515E. 1.2 Features s s s s s Low collector-emitter saturation voltage VCEsa... |
| Features |
s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
s s s s s s DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Low power switches (e.g. motors, fans) Portable applications
1.4 Quick reference data
Table 1: VCEO IC ICM RCEsat
[1]
Quick reference data Conditions open base single pulse; tp ≤ 1 ms IC = 500 mA; IB = 50 mA
[1]
Symbol ... |
| Document |
 PBSS2515E Data Sheet
PDF 110.11KB |
Similar Datasheet
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