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PBSS5220V |
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| Part Number | PBSS5220V |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package. 1.2 Features s s s s s Low collector-emitter saturation voltage VCEsat High col... |
| Features |
s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
s s s s s s DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Low power switches (e.g. motors, fans) Portable applications
1.4 Quick reference data
Table 1: VCEO IC ICM RCEsat Quick reference data Conditions open base tp ≤ 300 µs IC = −1 A; IB = −100 mA Min Typ 140 Max −20 −2 −4 210... |
| Document |
 PBSS5220V Data Sheet
PDF 141.86KB |
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