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IXTY1R4N60P |
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| Part Number | IXTY1R4N60P |
| Manufacturer | IXYS |
| Description | PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU1R4N60P IXTY1R4N60P IXTP1R4N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Condition... |
| Features |
International Standard Packages Low QG Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Advantages High Power Density Easy to Mount Space Savings Applications DC-DC Converters Switch-Mode and Resonant-Mode Power Supplies AC and DC Motor Drives Discharge Circiuts in Lasers, Spark Igniters, RF Generators High Voltage Pulse Power Applications DS99253F(6/17) IXTU1R4N60P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 20V, ID = 0.5 • ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz Qg(on) Qgs VG... |
| Document |
 IXTY1R4N60P Data Sheet
PDF 309.77KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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