K7A163630B |
Part Number | K7A163630B |
Manufacturer | SAMSUNG ELECTRONICS |
Description | The K7A163630B and K7A161830B are 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organized as 512K(... |
Features |
• Synchronous Operation. • 2 Stage Pipelined operation with 4 Burst. • On-Chip Address Counter. • Self-Timed Write Cycle. • On-Chip Address and Control Registers. • VDD= 2.5 or 3.3V +/- 5% Power Supply. • 5V Tolerant Inputs Except I/O Pins. • Byte Writable Function. • Global Write Enable Controls a full bus-width write. • Power Down State via ZZ Signal. • LBO Pin allows a choice of either a interleaved burst or a linear burst. • Three Chip Enables for simple depth expansion with No Data Contention only for TQFP ; 2cycle Enable, 1cycle Disable. • Asynchronous Output Enable Control. • ADSP, ADSC... |
Document |
K7A163630B Data Sheet
PDF 400.32KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | K7A163631B |
Samsung semiconductor |
18MB B-DIE SYNC SRAM SPECIFICATION 100TQFP WITH PB / PB-FREE | |
2 | K7A163600A |
Samsung semiconductor |
512K x 36 / x32 & 1M x 18 Synchronous SRAM | |
3 | K7A163601A |
Samsung semiconductor |
512K x 36 / 32 & 1M x 18 Synchronous SRAM | |
4 | K7A163200A |
Samsung semiconductor |
512K x 36 / x32 & 1M x 18 Synchronous SRAM | |
5 | K7A163200A |
Samsung semiconductor |
512K x 36 / x32 & 1M x 18 Synchronous SRAM | |
6 | K7A163201A |
Samsung semiconductor |
512K x 36 / 32 & 1M x 18 Synchronous SRAM |