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IXTA5N60P |
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| Part Number | IXTA5N60P |
| Manufacturer | IXYS |
| Description | PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA 5N60P IXTP 5N60P VDSS = 600 V ID25 = 5A RDS(on) ≤ 1.7 Ω Symbol V DSS E VDGR VGSS VGSM T ID25 IDM IAR EAR E EAS dv/dt L PD ... |
| Features |
Characteristic Values Min. Typ. Max.
z International standard packages z Unclamped Inductive Switching (UIS)
rated z Low package inductance
- easy to drive and to protect
600
V
V GS(th)
V DS
=
V, GS
I
D
=
50μA
Advantages
3.0
5.5 V
IGSS
VGS = ±30 V, VDS = 0 V
±100 nA z Easy to mount z Space savings
I
DSS
V =V
DS
DSS
VGS = 0 V
TJ = 125°C
5 μA z High power density 50 μA
RDS(on)
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
1.7 Ω
© 2006 IXYS All rights reserved
DS99426E(04/06)
IXTA 5N60P IXTP 5N60P
Symbol
Test Conditions
Characteristic Values... |
| Document |
 IXTA5N60P Data Sheet
PDF 684.10KB |
Similar Datasheet
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|---|---|---|---|---|
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Desde 2024. D4U Semiconductor.
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