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IXFK64N60P |
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| Part Number | IXFK64N60P |
| Manufacturer | IXYS |
| Description | Advance Technical Information PolarHV HiPerFET Power MOSFET TM IXFK 64N60P IXFX 64N60P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode RDS(on) trr VDSS ID25 = 600 V = 64 A ≤ 96 m... |
| Features |
z
D = Drain Tab = Drain
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Mounting force (PLUS247) Mounting torque (TO-264) TO-264 PLUS247
300 20..120/4.5..25
z z
1.13/10 Nm/lb.in. 10 6 g g
z
International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 8 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C
Characteristic Values Min. Typ. Ma... |
| Document |
 IXFK64N60P Data Sheet
PDF 137.96KB |
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Desde 2024. D4U Semiconductor.
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