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KHB1D0N60I |
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| Part Number | KHB1D0N60I |
| Manufacturer | KEC |
| Description | This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ball... |
| Features |
VDSS= 600V, ID= 1.0A Drain-Source ON Resistance : RDS(ON)=12 @VGS = 10V Qg(typ.) = 5.9nC
K Q E H P F F L M O
DIM MILLIMETERS _ 0.2 6.6 + A _ 0.2 6.1 + B _ 0.3 5.34 + C _ 0.2 0.7 + D _ 0.2 2.7 + E _ 0.2 2.3 + F 0.96 MAX H _ 0.1 2.3 + I _ 0.1 0.5 + J 1.5 K _ 0.1 0.5 + L _ 0.1 M 0.8 + O 0.55 MIN _ 0.2 P 1.02 + _ 0.2 Q 0.8 +
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2
3
1. GATE 2. DRAIN 3. SOURCE
MAXIMUM RATING (Ta=25
CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Dra... |
| Document |
 KHB1D0N60I Data Sheet
PDF 86.47KB |
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