IXFK180N15P |
Part Number | IXFK180N15P |
Manufacturer | IXYS |
Description | Advance Technical Information www.DataSheet4U.com PolarTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFK 180N15P VDSS ID25 = 150 V = 180 A RDS(on) ≤ 11 mΩ Symbol VDSS VDGR VDSS VGSM ID25 I... |
Features |
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International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
1.6 mm (0.062 in.) from case for 10 s Mounting torque
300
Advantages
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1.13/10 Nm/lb.in. 10 g
Easy to mount Space savings High power density
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 150°C
Characteristic Values Min. Typ. Max. 150 2.5 5.0 ±200 25 250 11 V V nA μA μA mΩ
VGS = 10 V, ID = 0.5 ID25 Pulse test, ... |
Document |
IXFK180N15P Data Sheet
PDF 156.36KB |
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