PHB23NQ10LT |
Part Number | PHB23NQ10LT |
Manufacturer | NXP (https://www.nxp.com/) |
Description | Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features www.DataSheet4U.com s Logic level threshold s Fast switching s Tre... |
Features |
www.DataSheet4U.com
s Logic level threshold s Fast switching
s TrenchMOS technology
1.3 Applications
s DC-to-DC converters s Switched-mode power supplies s General purpose switching
1.4 Quick reference data
s VDS ≤ 100 V s RDSon ≤ 72 mΩ s ID ≤ 23 A s QGD = 9.3 nC (typ)
2. Pinning information
Table 1. Pin 1 2 3 mb Pinning Description gate (G) drain (D) source (S) mounting base; connected to drain
mbb076
Simplified outline
[1]
Symbol
D
mb
G S
2 1 3
SOT404 (D2PAK)
[1] It is not possible to make a connection to pin 2.
Philips Semiconductors
PHB23NQ10LT
N-channel TrenchMOS logic level F... |
Document |
PHB23NQ10LT Data Sheet
PDF 101.62KB |
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