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IXTM20N60 |
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| Part Number | IXTM20N60 |
| Manufacturer | IXYS |
| Description | MegaMOSTMFET Obsolete: IXTM20N60 N-Channel Enhancement Mode IXTH 20N60 IXTM 20N60 VDSS = 600 V ID25 = 20 A RDS(on) = 0.35 Ω Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS V DGR VGS... |
| Features |
l International standard packages l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure
l Low package inductance (< 5 nH)
- easy to drive and to protect
l Fast switching times
Symbol
VDSS V
GS(th)
I GSS
IDSS
R DS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max.
VGS = 0 V, ID = 250 µA
600
V DS
=
V, GS
I
D
=
250
µA
2
V GS
=
±20
V, DC
V DS
=
0
VDS = 0.8 • VDSS VGS = 0 V TJ = 25°C TJ = 125°C V = 10 V, I = 0.5 I GS D D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % V 4.5 V ±100 nA 200 µA 1 mA 0.35 Ω Applic... |
| Document |
 IXTM20N60 Data Sheet
PDF 1.24MB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
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